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 CM800HA-28H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMODTM H-Series Module
800 Amperes/1400 Volts
A B U - M4 THD (2 TYP.)
R
K P
E
M
G
B S - M8 THD (2 TYP.)
A
C
E
C
J
G
Q T - DIA. (4 TYP.) H
L F N
E
D
Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Ysolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM800HA-28H is a 1400V (VCES), 800 Ampere Single IGBTMODTM Power Module.
Type CM Current Rating Amperes 800 VCES Volts (x 50) 28
E
C
G E
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 5.12 4.330.01 1.840 Millimeters 130.0 110.00.25 46.75 Dimensions L M N P Q R S T U Inches 0.79 0.77 0.75 0.61 0.51 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 20.0 19.5 19.0 15.6 13.0 9.0 M8 Dia. 6.5 M4
1.730.04/0.02 44.01.0/0.5 1.460.04/0.02 37.01.0/0.5 1.42 1.25 1.18 1.10 1.08 36.0 31.8 30.0 28.0 27.5
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800HA-28H Single IGBTMODTM H-Series Module 800 Amperes/1400 Volts
Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Max. Mounting Torque M4 G-E Terminal Screws Module Weight (Typical) V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd - - - - VRMS
CM800HA-28H -40 to +150 -40 to +125 1400 20 800 1600* 800 1600* 4800 95 26 13 1600 2500
Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 80mA, VCE = 10V IC = 800A, VGE = 15V IC = 800A, VGE = 15V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 800A, VGS = 15V IE = 800A, VGS = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.7 2.4 4590 - Max. 5.0 0.5 7.5 3.6 - - 3.5 Units mA
A
Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 800A, diE/dt = -1600A/s IE = 800A, diE/dt = -1600A/s VCC = 600V, IC = 800A, VGE1 = VGE2 = 15V, RG = 3.3 VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 6.3 Max. 172 60 35 500 1200 1000 350 250 - Units nF nF nF ns ns ns ns ns
Diode Reverse Recovery Time Diode Reverse Recovery Charge
C
Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.026 0.058 0.018 Units C/W C/W C/W
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800HA-28H Single IGBTMODTM H-Series Module 800 Amperes/1400 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
1600
Tj = 25C 15
VGE = 20V
IC, (AMPERES)
1600
13 12
VCE = 10V Tj = 25C Tj = 125C
5
VGE = 15V Tj = 25C Tj = 125C
1200
IC, (AMPERES)
1200
11
VCE(sat), (VOLTS)
4
3
800
10
800
2
400
9 7 8
400
1
0 0 2 4 6 8 10
VCE, (VOLTS)
0 0 4 8 12 16 20
VGE, (VOLTS)
0 0 400 800
IC, (AMPERES)
1200
1600
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
IC = 1600A IC = 800A
IE, (AMPERES)
104
Tj = 25C
CAPACITANCE, Cies, Coes, Cres, (nF)
103
VGE = 0V Cies
8
VCE(sat), (VOLTS)
102
103
6
101
Coes
4
102 2
IC = 320A
100
Cres
0 0 4 8 12 16 20
VGE, (VOLTS)
101 1.0
1.5
2.0
2.5
VEC, (VOLTS)
3.0
3.5
4.0
10-1 10-1
100
VCE, (VOLTS)
101
102
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
103
REVERSE RECOVERY TIME, t rr, (ns)
Irr
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 800A Tj = 25C VCC = 800V
16
VCC = 600V
SWITCHING TIME, (ns)
trr
12
102
102
8
4
di/dt = -1600A/sec Tj = 25C
101 101
COLLECTOR CURRENT IC, (AMPERES)
102
103
101 104
0 0 1500 3000 4500 6000 7500
GATE CHARGE, QG, (nC)
EMITTER CURRENT, IE, (AMPERES)
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800HA-28H Single IGBTMODTM H-Series Module 800 Amperes/1400 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE)
100
Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.026C/W
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE)
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
100
Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.58 C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
4


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